By T. S. Moss
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Additional resources for International Conference on Infrared Physics (CIRP). Proceedings of a Conference Held in Zurich, 11–15 August 1975
M O T T E , Appl. Phys. Lett. 23, 450 (1973). Moss, T. , G . J. BURRELL & B. ELLIS, Semiconductor Opto-Electronics Butterworths, L o n d o n ; J o h n Wiley, N e w York (1973). PAWLIKOWSKI, J. M . & P . BECLA, Infrared Phys. 15, 331 (1975). ROLLS, W . H . & D . V. EDDOLLS, Infrared Phys. 13, 143 (1973). RYE, B. J. & W . H . STEVENS, Infrared Phys. 15, 133 (1975). , P . M C N U T T & R. J. BELL, Infrared Phys. 15, 27 (1975). VERIE, C. & M . SIRIEX, J. Quantum electron. QE8, 180 (1972). , G . SMITH, B.
W. SARD, B. J. PEYTON & F. P. PACE, Infrared detectors. Semiconductors and Semimetals, Vol. 5. Edited by Williardson and Beer, Academic Press (1970). 3. , W. J. MOORE & F. DE ROSA, Int. Conf. on Sobmm. Waves and their Application, Atlanta (1974). 4. PUTLEY, E. , Phys. stat. sol. 6, 571 (1964). 5. TEICH, M. C , Infrared detectors. Semiconductors and Semimetals, Vol. 5. Edited by Williardson and Beer, Academic Press (1970). 6. , thesis, University of Utrecht (1975). 7. SHELTON, J. C, thesis, University of California, Los Angeles (1971).
It has been shown(2) that 10 μιη detectors at 77°K exhibit negligible 1/f noise at 70 Hz and use in systems shows this noise to be negligible at 1 Hz. The Pb^Sn^^Te bandgap changes with temperature by +0-42 meV/°K moving the peak response to shorter wavelengths with increasing temperature. However, the change of bandgap with composition is —6 meV/%SnTe allowing compensation for the temperature shift by adjustment of composition. Since large single crystal layers of uniform predetermined composition can be grown by vapour phase epitaxy monolithic arrays can be made.
International Conference on Infrared Physics (CIRP). Proceedings of a Conference Held in Zurich, 11–15 August 1975 by T. S. Moss